Innovative organic semiconducor technology
High Image Quality
Wide spectral imaging in multiple scenes
Cost optimization
The C100GE_SW640A features a new-generation visible-to-shortwave infrared CMOS image sensors, delivering high-resolution imaging across a broad spectral range from visible to shortwave infrared. With exceptional sensitivity, ultra-low dark current noise, and wide operating temperature range, this camera is ideal for demanding applications such as laser beam profiling, material sorting, and semiconductor inspection.
Featuring next-generation visible-to-shortwave infrared CMOS image sensors
High-resolution imaging covering the visible-to-shortwave infrared band
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P/N |
C100GE_SW640A | |
| Body Dimensions | 52x52x64.2mm | |
| Pixel Pitch | 15 μm | |
| Spectral Range | 0.3 μm-1.5 μm | |
| Array Format | 640(H)x512(V) | |
| Frame Rate | 150fps@8bit | |
| Exposure Time | 50μs~1s | |
| Cooling Method | TEC | |
| Operation Temperature | -20℃~+50°C | |
| Storage Temperature | -30℃~+70°C | |
| Image Processing | Single-point Correction, Dead Pixel Correction, ROI, binng, etc. | |
| Shutter Type | Global | |
| Full Well Capacity | 1161ke- | |
| Singal-Noise Ratio | 56.2dB | |
| Dynamic Range | 69.9dB | |
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Readout Noise |
<350e-@LG |
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Gain |
Low Gain & High Gain |
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Bit Depth |
8bit/10bit/12bit/14bit |
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Data Interface |
GigE |
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Optical Mount |
C-Mount |
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Operating Voltage |
DC+10V~+28V (Typ. 12V) |
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Power Consumption |
< 8W (with cooling) |
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Product Dimensions (Unit: mm)
